Kingston KSM26ED8/16HD 16HD 16GB 2666MHz DDR4 ECC CL19 DIMM 2Rx8 Hynix D Retail
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Regular price
$75.15 USD
Sale price
$75.15 USD
Regular price
$0.00 USD
Description
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Kingston KSM26ED8/16HD 16HD 16GB 2666MHz DDR4 ECC CL19 DIMM 2Rx8 Hynix D Retail
Current product
Current
Vendor:
Kingston
Kingston KSM26ED8/16HD 16HD 16GB 2666MHz DDR4 ECC CL19 DIMM 2Rx8 Hynix D Retail
Regular price
$75.15 USD
Sale price
$75.15 USD
Regular price
$0.00 USD
Options
Descriptions
Vendor: Kingston
SKU: 246821MPN: KSM26ED8/16HD
Marketing Information
DESCRIPTION
Kingston's KSM26ED8/16HD is a 2G x 72-bit (16GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 2Rx8, ECC, memory module, based on eighteen 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
FEATURES
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Dual-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• Temperature sensor with integrated SPD
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.23” (31.25mm)
Detail Specifications
CL(IDD)
19 cycles
Row Cycle Time (tRCmin)
45.75ns(min.)
Refresh to Active/Refresh Command Time (tRFCmin)
350ns(min.)
Row Active Time (tRASmin)
32ns(min.)
UL Rating
94 V - 0
Operating Temperature
0o C to +85o C
Storage Temperature
-55o C to +100o C
Module Assembly
DRAM: HYNIX (D-DIE)
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• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Dual-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• Temperature sensor with integrated SPD
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.23” (31.25mm)
Detail Specifications
CL(IDD)
19 cycles
Row Cycle Time (tRCmin)
45.75ns(min.)
Refresh to Active/Refresh Command Time (tRFCmin)
350ns(min.)
Row Active Time (tRASmin)
32ns(min.)
UL Rating
94 V - 0
Operating Temperature
0o C to +85o C
Storage Temperature
-55o C to +100o C
Module Assembly
DRAM: HYNIX (D-DIE)
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